Термоэлектрические и мемристивные особенности структур Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-S-=SUB=-3-=/SUB=-/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=- и Ag/Sb-=SUB=-2-=/SUB=-Te-=SUB=-3-=/SUB=-/Ag
نویسندگان
چکیده
Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of has semiconductor behavior, resistivity an order magnitude higher than film; Seebeck coefficient 1.5 3 times film single-crystal Sb2Te3, respectively. The currentvoltage exhibit memristive properties with unipolar resistive switching, whereas can be considered as memristor parallel connected capacitance.
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ژورنال
عنوان ژورنال: Fizika i tehnika poluprovodnikov
سال: 2022
ISSN: ['0015-3222', '1726-7315']
DOI: https://doi.org/10.21883/ftp.2022.03.52126.9770